All IGBT. IRGB10B60KD Datasheet

 

IRGB10B60KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRGB10B60KD

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic| @25℃, A: 22

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2

Package: TO220AB

IRGB10B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGB10B60KD Datasheet (PDF)

 ..1. Size:111K  international rectifier
 irgb10b60kd.pdf

IRGB10B60KD IRGB10B60KD

PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V

 9.1. Size:160K  international rectifier
 irgb14c40l.pdf

IRGB10B60KD IRGB10B60KD

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

 9.2. Size:332K  international rectifier
 irgb15b60kd.pdf

IRGB10B60KD IRGB10B60KD

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

Datasheet: IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , TGAN20N135FD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D .

 

 
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