IRGB4064D PDF and Equivalents Search

 

IRGB4064D PDF Specs and Replacement


   Type Designator: IRGB4064D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 101 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 49 pF
   Package: TO220AB
 

 IRGB4064D Substitution

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IRGB4064D PDF specs

 ..1. Size:374K  international rectifier
irgb4064d.pdf pdf_icon

IRGB4064D

PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.6V n-channel 100% of The Parts Tested for ILM ... See More ⇒

 7.1. Size:294K  international rectifier
irgb4060d.pdf pdf_icon

IRGB4064D

PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 8.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E VCE(on) typ. = 1.55V Square RBSOA n-channel 100% of The Parts Tested for 4X Rate... See More ⇒

 7.2. Size:434K  international rectifier
irgb4062d.pdf pdf_icon

IRGB4064D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

 7.3. Size:415K  international rectifier
irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf pdf_icon

IRGB4064D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

Specs: IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IKW30N60H3 , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 .

Keywords - IRGB4064D transistor spec

 IRGB4064D cross reference
 IRGB4064D equivalent finder
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