IRGB4086 PDF and Equivalents Search

PD - 96222 IRGB4086PbF PDP TRENCH IGBT IRGS4086PbF Key Parameters Features VCE min 300 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 70A l Optimized for Sustain and Energy Recovery 1.90 V Circuits in PDP Applications IRP max @ TC= 25 C A 250 l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for Improved Panel Efficiency l High Repetitive Peak Current Capabi... See More ⇒

PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 8.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E VCE(on) typ. = 1.55V Square RBSOA n-channel 100% of The Parts Tested for 4X Rate... See More ⇒

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) ... See More ⇒

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒

PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V... See More ⇒

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PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) ... See More ⇒

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat... See More ⇒

PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 18A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) ... See More ⇒

PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.6V n-channel 100% of The Parts Tested for ILM ... See More ⇒

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat... See More ⇒