All IGBT. IRGB4B60K Datasheet

 

IRGB4B60K IGBT. Datasheet pdf. Equivalent

Type Designator: IRGB4B60K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 63W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Collector Current |Ic|, A: 12A

Package: TO220AB

IRGB4B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGB4B60K Datasheet (PDF)

1.1. irgb4b60kd1.pdf Size:377K _international_rectifier

IRGB4B60K
IRGB4B60K

PD - 94607 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 6.8A, TC=100C 10s Short Circuit Capability. G Square RBSOA. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. VCE(on)

1.2. irgb4b60k.pdf Size:345K _international_rectifier

IRGB4B60K
IRGB4B60K

PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150C E Benefits VCE

1.3. irgb4b60kd1.pdf Size:442K _igbt_a

IRGB4B60K
IRGB4B60K

PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

1.4. irgb4b60k.pdf Size:299K _igbt_a

IRGB4B60K
IRGB4B60K

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

Datasheet: IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , 10N40C1D , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 .

 


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