All IGBT. IRGIB7B60KD Datasheet

 

IRGIB7B60KD Datasheet and Replacement


   Type Designator: IRGIB7B60KD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 39 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Package: TO220F
      - IGBT Cross-Reference

 

IRGIB7B60KD Datasheet (PDF)

 ..1. Size:439K  international rectifier
 irgib7b60kd.pdf pdf_icon

IRGIB7B60KD

PD - 94620BIRGIB7B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 8.0A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated at 175C.VCE(on) typ. =

 9.1. Size:282K  international rectifier
 irgib15b60kd1.pdf pdf_icon

IRGIB7B60KD

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 9.2. Size:392K  international rectifier
 irgib10b60kd1p.pdf pdf_icon

IRGIB7B60KD

IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E

 9.3. Size:277K  international rectifier
 irgib6b60kd.pdf pdf_icon

IRGIB7B60KD

PD-94427DIRGIB6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 6.0A, TC=90C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.G 10s Short Circuit Capability.tsc > 10s, TJ=175C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.E Positive VCE (on) Temperature Coeffici

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Datasheet: IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , MGD623S , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-EP , IRGP4050 .

History: MMG75J120U6HN | 2SH29

Keywords - IRGIB7B60KD transistor datasheet

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 IRGIB7B60KD equivalent finder
 IRGIB7B60KD lookup
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 IRGIB7B60KD replacement

 

 
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