All IGBT. IRGP4066 Datasheet

 

IRGP4066 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4066

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 454

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Collector Current |Ic|, A: 140

Package: TO247

IRGP4066 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4066 Datasheet (PDF)

0.1. irgp4066.pdf Size:284K _international_rectifier

IRGP4066 IRGP4066

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

0.2. irgp4066d-e.pdf Size:331K _international_rectifier

IRGP4066 IRGP4066

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

 0.3. irgp4066-e.pdf Size:284K _international_rectifier

IRGP4066 IRGP4066

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

0.4. auirgp4066d1.pdf Size:363K _international_rectifier

IRGP4066 IRGP4066

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A • Low VCE (ON) Trench IGBT Technology • Low switching losses G tSC ≥ 5μs, TJ(max) = 175°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA E VCE(on) typ. = 1.70V • Square RBSOA n-channel • 100

 0.5. irgp4066d.pdf Size:331K _international_rectifier

IRGP4066 IRGP4066

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

Datasheet: IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , RJP63F3DPP-M0 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D .

 

 
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