IRGP4066 Datasheet. Specs and Replacement

Type Designator: IRGP4066  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 454 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

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IRGP4066 datasheet

 ..1. Size:284K  international rectifier
 irgp4066.pdf pdf_icon

IRGP4066

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient ... See More ⇒

 0.1. Size:284K  international rectifier
 irgp4066-e.pdf pdf_icon

IRGP4066

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient ... See More ⇒

 0.2. Size:315K  international rectifier
 irgp4066dpbf irgp4066d-epbf.pdf pdf_icon

IRGP4066

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 0.3. Size:331K  international rectifier
 irgp4066d-e.pdf pdf_icon

IRGP4066

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

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Specs: IRGP30B120KD-E, IRGP30B60KD-E, IRGP35B60PD, IRGP35B60PD-EP, IRGP4050, IRGP4062D, IRGP4063, IRGP4063D, FGH30S130P, IRGP4066D, IRGP4066D-E, IRGP4066-E, IRGP4068D, IRGP4068D-E, IRGP4069, IRGP4069D, IRGP4072D

Keywords - IRGP4066 transistor spec

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