All IGBT. IRGP4068D-E Datasheet

 

IRGP4068D-E IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4068D-E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.14V

Maximum Collector Current |Ic|, A: 96A

Package: TO247AD

IRGP4068D-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4068D-E Datasheet (PDF)

1.1. irgp4068d-e.pdf Size:263K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97250C IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low Switching Losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C

1.2. irgp4068d.pdf Size:263K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97250C IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low Switching Losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C

3.1. irgp4062-e.pdf Size:253K _igbt_a

IRGP4068D-E
IRGP4068D-E

IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 24A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient E VCE(on) typ. =

3.2. irgp4063-e.pdf Size:272K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-effic

3.3. irgp4066d-e.pdf Size:331K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

3.4. irgp4069d-e.pdf Size:309K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

3.5. auirgp4062d1.pdf Size:432K _igbt_a

IRGP4068D-E
IRGP4068D-E

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. E VCE(on) ty

3.6. irgp4062d-e.pdf Size:434K _igbt_a

IRGP4068D-E
IRGP4068D-E

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

3.7. irgp4062d.pdf Size:434K _igbt_a

IRGP4068D-E
IRGP4068D-E

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

3.8. irgp4069.pdf Size:268K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

3.9. irgp4066d.pdf Size:331K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

3.10. irgp4063d1.pdf Size:1407K _igbt_a

IRGP4068D-E
IRGP4068D-E

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100°C G tSC 5µs, TJ(max) = 175°C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons  IRGP4063D1PbF  IRGP4063D1‐EPbF  • Industrial Motor Drive  G C E • Inverters  • UPS Gate Collecto

3.11. irgp4063d.pdf Size:782K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) • P

3.12. auirgp4066d1.pdf Size:363K _igbt_a

IRGP4068D-E
IRGP4068D-E

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A • Low VCE (ON) Trench IGBT Technology • Low switching losses G tSC ≥ 5μs, TJ(max) = 175°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA E VCE(on) typ. = 1.70V • Square RBSOA n-channel • 100

3.13. irgp4063.pdf Size:272K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-effic

3.14. irgp4069-e.pdf Size:268K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

3.15. irgp4066.pdf Size:284K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

3.16. irgp4066-e.pdf Size:284K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

3.17. irgp4069d.pdf Size:309K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

3.18. auirgp4062d.pdf Size:314K _igbt_a

IRGP4068D-E
IRGP4068D-E

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tSC ≥ 5μs, TJ(max) = 175°C • 5μs SCSOA • Square RBSOA E VCE(on) typ. = 1.60V • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Co

3.19. auirgp4063d.pdf Size:337K _igbt_a

IRGP4068D-E
IRGP4068D-E

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100°C • Low switching losses • Maximum Junction temperature 175 °C G tSC 5μs, TJ(max) = 175°C • 5 μS short circuit SOA • Square RBSOA E VCE(on) typ. = 1.6V • 100% of the

Datasheet: IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , STGW20NC60VD , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U .

 


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