GT5G101 IGBT. Datasheet pdf. Equivalent
Type Designator: GT5G101
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 20 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 700 nS
Package: TO3P
GT5G101 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT5G101 Datasheet (PDF)
gt5g103.pdf
GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40
gt5g102.pdf
GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-emitte
gt5g133.pdf
GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mmUnit: mm Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emi
Datasheet: GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , SGT40N60FD2PN , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 .
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