GT5G101 Datasheet. Specs and Replacement

Type Designator: GT5G101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 20 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 700 nS

Package: TO3P

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GT5G101 datasheet

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GT5G101

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) High Input Impedance Low Saturation Voltage VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40... See More ⇒

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GT5G101

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit mm 3rd Generation High input impedance Low saturation voltage V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-emitte... See More ⇒

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GT5G101

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit mm Unit mm Enhancement-mode Low gate drive voltage VGE = 2.5 V (min) (@IC = 130 A) Peak collector current IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emi... See More ⇒

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Specs: GT50J102, GT50J301, GT50J322, GT50L101, GT50M101, GT50Q101, GT50S101, GT50T101, IKW50N60T, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, GT60M101, GT60M102, GT60M103

Keywords - GT5G101 transistor spec

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