IRGS15B60KD Datasheet. Specs and Replacement

Type Designator: IRGS15B60KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 208 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 31 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: D2PAK

  📄📄 Copy 

 IRGS15B60KD Substitution

- IGBTⓘ Cross-Reference Search

 

IRGS15B60KD datasheet

 ..1. Size:332K  international rectifier
 irgs15b60kd.pdf pdf_icon

IRGS15B60KD

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive V... See More ⇒

 4.1. Size:259K  international rectifier
 irgs15b60k.pdf pdf_icon

IRGS15B60KD

PD - 96358 IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. IC = 15A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10 s, TJ=150 C E Lead-Free n-channel VCE(on) typ. = 1.8V Benefits Benchmark Efficiency for Motor Control. ... See More ⇒

 9.1. Size:50K  international rectifier
 irgs14b40l.pdf pdf_icon

IRGS15B60KD

L IRGS14B40L INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r Rg Gat e Rg e 2 Em it te r D Pak MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 C VGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mA IC25 CONTINUOU... See More ⇒

 9.2. Size:111K  international rectifier
 irgs10b60kd.pdf pdf_icon

IRGS15B60KD

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive V... See More ⇒

SHOW MORE

Specs: IRGP50B60PD1, IRGP50B60PD1-EP, IRGPS40B120U, IRGPS40B120UD, IRGPS60B120KD, IRGR3B60KD2, IRGS10B60KD, IRGS15B60K, FGH40N60UFD, IRGS30B60K, IRGS4056D, IRGS4062D, IRGS4086, IRGS4B60K, IRGS4B60KD1, IRGS6B60K, IRGS6B60KD

Keywords - IRGS15B60KD transistor spec

 IRGS15B60KD cross reference
 IRGS15B60KD equivalent finder
 IRGS15B60KD lookup
 IRGS15B60KD substitution
 IRGS15B60KD replacement