IRGS4056D IGBT. Datasheet pdf. Equivalent
Type Designator: IRGS4056D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 140
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.85
Maximum Collector Current |Ic|, A: 42
Package: D2Pak
IRGS4056D Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGS4056D Datasheet (PDF)
0.1. irgs4056d.pdf Size:404K _international_rectifier
PD - 96197 IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 12A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •
8.1. irgs4062d.pdf Size:460K _international_rectifier
PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur
8.2. irgs4064d.pdf Size:293K _international_rectifier
PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5μs SCSOA E • Square RBSOA VCE(on) typ. = 1.6V • 100% of The Parts Tested for (ILM) n-channel •
8.3. irgs4045d.pdf Size:332K _international_rectifier
IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE C C IC 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C E G G D2-Pak VCE(on) typ. 1.7V E IRGS4045DPbF n-channel Applications G C E Appliance Motor Drive Gate Colletor Emitter Inverters SMPS Features Benefits High efficiency in a wide range of applications and
8.4. auirgs4062d1.pdf Size:415K _international_rectifier
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.
Datasheet: IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRG7IC28U , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD .



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