IRGS4086 Datasheet. Specs and Replacement

Type Designator: IRGS4086  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 160 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.49 V @25℃

tr ⓘ - Rise Time, typ: 31 nS

Coesⓘ - Output Capacitance, typ: 110 pF

Package: D2PAK

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IRGS4086 datasheet

 ..1. Size:317K  international rectifier
 irgs4086.pdf pdf_icon

IRGS4086

PD - 96222 IRGB4086PbF PDP TRENCH IGBT IRGS4086PbF Key Parameters Features VCE min 300 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 70A l Optimized for Sustain and Energy Recovery 1.90 V Circuits in PDP Applications IRP max @ TC= 25 C A 250 l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for Improved Panel Efficiency l High Repetitive Peak Current Capabi... See More ⇒

 8.1. Size:332K  international rectifier
 irgs4045d.pdf pdf_icon

IRGS4086

IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE C C IC 6.0A, TC = 100 C tsc > 5 s, Tjmax = 175 C E G G D2-Pak VCE(on) typ. 1.7V E IRGS4045DPbF n-channel Applications G C E Appliance Motor Drive Gate Colletor Emitter Inverters SMPS Features Benefits High efficiency in a wide range of applications and ... See More ⇒

 8.2. Size:293K  international rectifier
 irgs4064d.pdf pdf_icon

IRGS4086

PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel ... See More ⇒

 8.3. Size:415K  international rectifier
 auirgs4062d1.pdf pdf_icon

IRGS4086

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒

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Specs: IRGPS60B120KD, IRGR3B60KD2, IRGS10B60KD, IRGS15B60K, IRGS15B60KD, IRGS30B60K, IRGS4056D, IRGS4062D, FGH60N60SMD, IRGS4B60K, IRGS4B60KD1, IRGS6B60K, IRGS6B60KD, IRGS8B60K, IRGSL10B60KD, IRGSL14C40L, IRGSL15B60KD

Keywords - IRGS4086 transistor spec

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