All IGBT. IRGS4B60KD1 Datasheet

 

IRGS4B60KD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS4B60KD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 63

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Collector Current |Ic|, A: 12

Package: D2Pak

IRGS4B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGS4B60KD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS4B60KD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 63

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Collector Current |Ic|, A: 12

Package: D2Pak

IRGS4B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGS4B60KD1 Datasheet (PDF)

0.1. irgs4b60kd1.pdf Size:442K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

PD - 94607BIRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated

5.1. irgs4b60k.pdf Size:299K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

PD - 94633AIRGB4B60KIRGS4B60KIRGSL4B60KINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150CEVCE(on) typ. = 2.1VBenefits

 9.1. irgs4062d.pdf Size:460K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur

9.2. irgs4630d.pdf Size:1268K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

 9.3. irgs4610d.pdf Size:428K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

9.4. irgs4064d.pdf Size:293K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

PD - 96424IRGS4064DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 10A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel

 9.5. irgs4056d.pdf Size:404K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

PD - 96197IRGS4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

9.6. irgs4640d.pdf Size:809K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

9.7. irgs4045d.pdf Size:332K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGS4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHVCES = 600VULTRAFAST SOFT RECOVERY DIODECCIC 6.0A, TC = 100Ctsc > 5s, Tjmax = 175CEGGD2-PakVCE(on) typ. 1.7V EIRGS4045DPbFn-channelApplicationsG C E Appliance Motor DriveGate Colletor Emitter Inverters SMPSFeatures BenefitsHigh efficiency in a wide range of applications and

9.8. irgs4607d.pdf Size:858K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

9.9. irgs4620d.pdf Size:901K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp

9.10. irgs4615d.pdf Size:336K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGS4615DPbFIRGB4615DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeCCVCES = 600VCIC = 15A, TC = 100CEECGGtsc > 5s, Tjmax = 175CGEVCE(on) typ. = 1.55V @ 8ATO-220ABD2-Pakn-channelIRGB4615DPbFIRGS4615DPbFGCEGate Collector EmitterApplications Appliance Drives Inverters UPSFeatures BenefitsLow VCE(

9.11. auirgs4062d1.pdf Size:415K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

9.12. irgs4715d.pdf Size:672K _international_rectifier

IRGS4B60KD1
IRGS4B60KD1

IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100C tSC 5.5s, TJ(max) = 175C E C VCE(ON) typ. = 1.7V @ IC = 8A E GG G C EIRGS4715DPbFApplications IRGB4715DPbFn-channelD2PakTO220AB Industrial Motor Drive UPS G C E Solar Inverters Ga

Datasheet: IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , RJP30H1DPD , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D .

 

 
Back to Top