IRGS6B60KD Datasheet. Specs and Replacement

Type Designator: IRGS6B60KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 90 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: D2PAK

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IRGS6B60KD datasheet

 ..1. Size:311K  international rectifier
 irgs6b60kd.pdf pdf_icon

IRGS6B60KD

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (... See More ⇒

 5.1. Size:249K  international rectifier
 irgs6b60k.pdf pdf_icon

IRGS6B60KD

PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 7.0A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc > 10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Con... See More ⇒

Specs: IRGS15B60KD, IRGS30B60K, IRGS4056D, IRGS4062D, IRGS4086, IRGS4B60K, IRGS4B60KD1, IRGS6B60K, IXGH60N60, IRGS8B60K, IRGSL10B60KD, IRGSL14C40L, IRGSL15B60KD, IRGSL30B60K, IRGSL4062D, IRGSL4B60KD1, IRGSL6B60KD

Keywords - IRGS6B60KD transistor spec

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