IRGS6B60KD Datasheet and Replacement
Type Designator: IRGS6B60KD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 90 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 13 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Package: D2PAK
- IGBT Cross-Reference
IRGS6B60KD Datasheet (PDF)
irgs6b60kd.pdf

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (
irgs6b60k.pdf

PD - 94575AIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 7.0A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.Gtsc > 10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Con
Datasheet: IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , SGT50T65FD1PT , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD .
History: AOTF10B60D | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | HGT1S5N120CNS | MMG100J120U6HN | 7MBR25SA120-01
Keywords - IRGS6B60KD transistor datasheet
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History: AOTF10B60D | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | HGT1S5N120CNS | MMG100J120U6HN | 7MBR25SA120-01



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