All IGBT. IRGSL14C40L Datasheet

 

IRGSL14C40L IGBT. Datasheet pdf. Equivalent

Type Designator: IRGSL14C40L

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 430

Collector-Emitter saturation Voltage |Vcesat|, V: 1.4

Maximum Collector Current |Ic|, A: 20

Package: TO262

IRGSL14C40L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGSL14C40L Datasheet (PDF)

0.1. irgsl14c40l.pdf Size:160K _international_rectifier

IRGSL14C40L
IRGSL14C40L

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

8.1. irgsl15b60kd.pdf Size:332K _international_rectifier

IRGSL14C40L
IRGSL14C40L

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

8.2. irgsl10b60kd.pdf Size:111K _international_rectifier

IRGSL14C40L
IRGSL14C40L

PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V

Datasheet: IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRG4BC30W-S , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 .

 

 
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