IRGSL15B60KD IGBT. Datasheet pdf. Equivalent
Type Designator: IRGSL15B60KD
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 139
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 2.2
Maximum Collector Current |Ic|, A: 31
Package: TO262
IRGSL15B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGSL15B60KD Datasheet (PDF)
0.1. irgsl15b60kd.pdf Size:332K _international_rectifier
PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V
8.1. irgsl14c40l.pdf Size:160K _international_rectifier
IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •
8.2. irgsl10b60kd.pdf Size:111K _international_rectifier
PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V
Datasheet: IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRG4PC50UD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 .



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