All IGBT. IRGSL15B60KD Datasheet

 

IRGSL15B60KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRGSL15B60KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 139

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Collector Current |Ic|, A: 31

Package: TO262

IRGSL15B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGSL15B60KD Datasheet (PDF)

0.1. irgsl15b60kd.pdf Size:332K _international_rectifier

IRGSL15B60KD IRGSL15B60KD

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V

8.1. irgsl14c40l.pdf Size:160K _international_rectifier

IRGSL15B60KD IRGSL15B60KD

 IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •

8.2. irgsl10b60kd.pdf Size:111K _international_rectifier

IRGSL15B60KD IRGSL15B60KD

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V

Datasheet: IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRG4PC50UD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 .

 

 
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