All IGBT. IRGSL15B60KD Datasheet

 

IRGSL15B60KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRGSL15B60KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 139

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Collector Current |Ic|, A: 31

Package: TO262

IRGSL15B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGSL15B60KD Datasheet (PDF)

0.1. irgsl15b60kd.pdf Size:332K _international_rectifier

IRGSL15B60KD
IRGSL15B60KD

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

8.1. irgsl14c40l.pdf Size:160K _international_rectifier

IRGSL15B60KD
IRGSL15B60KD

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

8.2. irgsl10b60kd.pdf Size:111K _international_rectifier

IRGSL15B60KD
IRGSL15B60KD

PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V

Datasheet: IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRG4PC50UD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 .

 

 
Back to Top