IRGSL15B60KD Datasheet. Specs and Replacement

Type Designator: IRGSL15B60KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 208 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 31 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO262

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IRGSL15B60KD datasheet

 ..1. Size:332K  international rectifier
irgsl15b60kd.pdf pdf_icon

IRGSL15B60KD

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive V... See More ⇒

 8.1. Size:160K  international rectifier
irgsl14c40l.pdf pdf_icon

IRGSL15B60KD

IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector CES = C C CE(on) R1 Gate R2 L(min) ... See More ⇒

 8.2. Size:111K  international rectifier
irgsl10b60kd.pdf pdf_icon

IRGSL15B60KD

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive V... See More ⇒

 9.1. Size:311K  international rectifier
irgsl6b60kd.pdf pdf_icon

IRGSL15B60KD

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (... See More ⇒

Specs: IRGS4086, IRGS4B60K, IRGS4B60KD1, IRGS6B60K, IRGS6B60KD, IRGS8B60K, IRGSL10B60KD, IRGSL14C40L, FGA25N120ANTD, IRGSL30B60K, IRGSL4062D, IRGSL4B60KD1, IRGSL6B60KD, RJH1CD5DPQ-A0, RJH1CD5DPQ-E0, RJH1CD6DPQ-A0, RJH1CD6DPQ-E0

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