All IGBT. GT5G103LB Datasheet

 

GT5G103LB Datasheet and Replacement


   Type Designator: GT5G103LB
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 900 nS
   Package: IPAK
      - IGBT Cross-Reference

 

GT5G103LB Datasheet (PDF)

 7.1. Size:369K  toshiba
 gt5g103.pdf pdf_icon

GT5G103LB

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

 8.1. Size:134K  toshiba
 gt5g101.pdf pdf_icon

GT5G103LB

 8.2. Size:79K  toshiba
 gt5g102.pdf pdf_icon

GT5G103LB

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-emitte

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Datasheet: GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , YGW40N65F1 , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 .

History: 6MBI100VB-120-50 | IXST35N120B | STGD6M65DF2 | MSG100D350FHS | IRG4BC20F | MSG20T65HPT1 | MSG40T120FQC

Keywords - GT5G103LB transistor datasheet

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