All IGBT. RJH6088BDPK Datasheet

 

RJH6088BDPK Datasheet and Replacement


   Type Designator: RJH6088BDPK
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 268.8 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO3P
 

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RJH6088BDPK Datasheet (PDF)

 ..1. Size:105K  renesas
 rjh6088bdpk.pdf pdf_icon

RJH6088BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 4.1. Size:107K  renesas
 r07ds0390ej rjh6088bdp.pdf pdf_icon

RJH6088BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.1. Size:104K  renesas
 rjh6087bdpk.pdf pdf_icon

RJH6088BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.2. Size:91K  renesas
 rjh6086bdpk.pdf pdf_icon

RJH6088BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

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Datasheet: RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , SGT40N60FD2PN , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 .

History: DAZF100G120XCA | IGC99T120T8RH | IGW40N65F5A | STGW30NB60HD | IXGH32N100A3 | HGTP7N60A4

Keywords - RJH6088BDPK transistor datasheet

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