RJH6088BDPK IGBT. Datasheet pdf. Equivalent

   Type Designator: RJH6088BDPK
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268.8 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO3P

RJH6088BDPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH6088BDPK Datasheet (PDF)

..1. Size:105K renesas
rjh6088bdpk.pdf

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

4.1. Size:107K renesas
r07ds0390ej rjh6088bdp.pdf

8.1. Size:104K renesas
rjh6087bdpk.pdf

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

8.2. Size:91K renesas
rjh6086bdpk.pdf

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

8.3. Size:106K renesas
r07ds0389ej rjh6087bdp.pdf