All IGBT. RJH60D5DPM Datasheet

 

RJH60D5DPM IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60D5DPM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 45 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 78 nC
   Package: TO3PFM SC93

 RJH60D5DPM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D5DPM Datasheet (PDF)

 ..1. Size:98K  renesas
 rjh60d5dpm.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 ..2. Size:82K  renesas
 r07ds0174ej rjh60d5dpm.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100Silicon N Channel IGBT Rev.1.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:85K  renesas
 r07ds0527ej rjh60d5dpq.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:98K  renesas
 rjh60d5dpk.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400600V - 37A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.3. Size:82K  renesas
 r07ds0163ej rjh60d5dpk.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.4. Size:82K  renesas
 rjh60d5dpq-a0.pdf

RJH60D5DPM RJH60D5DPM

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

Datasheet: RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , TGAN60N60F2DS , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 .

 

 
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