GT60M301 IGBT. Datasheet pdf. Equivalent
Type Designator: GT60M301
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Package: TO264
GT60M301 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT60M301 Datasheet (PDF)
gt60m303.pdf
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
gt60m324.pdf
GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit: mmSixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11s (typ.) (IC = 60A) FRD : trr = 0.8s (typ.) (di/dt = -20 A/s) Low saturation
Datasheet: GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , SGT60N60FD1P7 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB .
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