GT60M301 Datasheet. Specs and Replacement

Type Designator: GT60M301  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 250 nS

Package: TO264

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GT60M301 datasheet

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GT60M301

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GT60M301

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.25 s (TYP.) FRD trr = 0.7 s (TYP.) Low saturation voltage VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) ... See More ⇒

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GT60M301

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit mm Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.11 s (typ.) (IC = 60A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation ... See More ⇒

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Specs: GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, GT60M101, GT60M102, GT60M103, YGW40N65F1, GT60M302, GT60M303, GT75G101, GT80J101, GT8G101, GT8G102, GT8G103, GT8G103LB

Keywords - GT60M301 transistor spec

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