All IGBT. TIG111GMH Datasheet

 

TIG111GMH IGBT. Datasheet pdf. Equivalent


   Type Designator: TIG111GMH
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 55 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Qgⓘ - Total Gate Charge, typ: 63 nC
   Package: TO3PMLH

 TIG111GMH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TIG111GMH Datasheet (PDF)

 ..1. Size:474K  sanyo
tig111gmh.pdf

TIG111GMH
TIG111GMH

TIG111GMHOrdering number : EN9014SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

 8.1. Size:461K  sanyo
tig111bf.pdf

TIG111GMH
TIG111GMH

TIG111BFOrdering number : EN9017ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 9.1. Size:463K  sanyo
tig110bf.pdf

TIG111GMH
TIG111GMH

TIG110BFOrdering number : EN9013ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 9.2. Size:479K  sanyo
tig110gmh.pdf

TIG111GMH
TIG111GMH

TIG110GMHOrdering number : EN9018SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

Datasheet: RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , RJP63K2DPP-M0 , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 .

 

 
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