TIG111GMH PDF and Equivalents Search

 

TIG111GMH Specs and Replacement

Type Designator: TIG111GMH

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 55 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 30 pF

Package: TO3PMLH

 TIG111GMH Substitution

- IGBT ⓘ Cross-Reference Search

 

TIG111GMH datasheet

 ..1. Size:474K  sanyo
tig111gmh.pdf pdf_icon

TIG111GMH

TIG111GMH Ordering number EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte... See More ⇒

 8.1. Size:461K  sanyo
tig111bf.pdf pdf_icon

TIG111GMH

TIG111BF Ordering number EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter... See More ⇒

 9.1. Size:463K  sanyo
tig110bf.pdf pdf_icon

TIG111GMH

TIG110BF Ordering number EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter... See More ⇒

 9.2. Size:479K  sanyo
tig110gmh.pdf pdf_icon

TIG111GMH

TIG110GMH Ordering number EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte... See More ⇒

Specs: RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , RJP63K2DPP-M0 , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 .

History: VS-GP100TS60SFPBF

Keywords - TIG111GMH transistor spec

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History: VS-GP100TS60SFPBF

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