TIG111GMH Datasheet and Replacement

TIG111GMHOrdering number : EN9014SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

TIG111BFOrdering number : EN9017ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

TIG110BFOrdering number : EN9013ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

TIG110GMHOrdering number : EN9018SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte