All IGBT. GT8G102 Datasheet

 

GT8G102 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT8G102
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO3P

 GT8G102 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT8G102 Datasheet (PDF)

 8.1. Size:364K  toshiba
 gt8g103.pdf

GT8G102 GT8G102

GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 V(B) DC VGES 6 VGate-

 8.2. Size:29K  toshiba
 gt8g101.pdf

GT8G102

 9.1. Size:246K  toshiba
 gt8g151.pdf

GT8G102 GT8G102

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mmUnit: mm Enhancement-mode TSON-8TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.050.650.058 7 6 58 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =

 9.2. Size:249K  toshiba
 gt8g121.pdf

GT8G102 GT8G102

GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit: mmSTROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage : V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VDC VGES 6 VG

Datasheet: GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT45F122 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 .

 

 
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