All IGBT. APT12GT60KR Datasheet

 

APT12GT60KR IGBT. Datasheet pdf. Equivalent


   Type Designator: APT12GT60KR
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Qgⓘ - Total Gate Charge, typ: 65 nC
   Package: TO220

 APT12GT60KR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT12GT60KR Datasheet (PDF)

Datasheet: APT100GF60JU3 , APT100GT120JU2 , APT100GT120JU3 , APT11GF120BRD1 , APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , IKW50N60H3 , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC .

 

 
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