GT8G103 Specs and Replacement
Type Designator: GT8G103
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 20 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
tr ⓘ - Rise Time, typ: 1200 nS
Package: DPAK
GT8G103 Substitution
GT8G103 datasheet
gt8g103.pdf
GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V (B) DC VGES 6 V Gate-... See More ⇒
gt8g151.pdf
GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit mm Unit mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current IC = 150 A (max) 0.65 0.05 0.65 0.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =... See More ⇒
gt8g121.pdf
GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit mm STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V DC VGES 6 V G... See More ⇒
Specs: GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , IRG4PC50U , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 .
Keywords - GT8G103 transistor spec
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GT8G103 equivalent finder
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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