GT60N321 IGBT. Datasheet pdf. Equivalent

   Type Designator: GT60N321
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 V @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Rise Time (tr), typ, nS: 230
   Package: TO3P

GT60N321 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60N321 Datasheet (PDF)

..1. Size:178K toshiba
gt60n321.pdf

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Unit: mmThe 4th Generation FRD included between emitter and collector Enhancement-mode High speed IGBT : t = 0.25 s (typ.) (I = 60 A) f CFRD : trr = 0.8 s (typ.) (di/dt = -20 A/s) Low saturation voltage: V = 2.3 V (typ.) (I = 60 A) C

9.1. Size:236K ixys
ixgt60n60c3d1.pdf

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25

9.2. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

9.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE

9.4. Size:576K ixys
ixgt60n60b2.pdf

Advance Technical DataVCES = 600 VIXGH 60N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 60N60B2VCE(sat)

9.5. Size:94K ixys
ixgt60n60.pdf

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,

9.6. Size:581K ixys
ixgt60n60c2.pdf