GT60N321 Datasheet PDF and Equivalents Search

 ..1. Size:178K  toshiba
 gt60n321.pdf

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Unit mm The 4th Generation FRD included between emitter and collector Enhancement-mode High speed IGBT t = 0.25 s (typ.) (I = 60 A) f C FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation voltage V = 2.3 V (typ.) (I = 60 A) C... See More ⇒

 9.1. Size:236K  ixys
 ixgt60n60c3d1.pdf

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25 ... See More ⇒

 9.2. Size:583K  ixys
 ixgh60n60c2 ixgt60n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒

 9.3. Size:284K  ixys
 ixgh60n60c3d1 ixgt60n60c3d1.pdf

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE... See More ⇒

 9.4. Size:576K  ixys
 ixgt60n60b2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒

 9.5. Size:94K  ixys
 ixgt60n60.pdf

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒

 9.6. Size:581K  ixys
 ixgt60n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒

 9.7. Size:95K  ixys
 ixgh60n60 ixgk60n60 ixgt60n60.pdf

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒

 9.8. Size:578K  ixys
 ixgh60n60b2 ixgt60n60b2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒

 9.9. Size:326K  silan
 sgt60n60fd1pn sgt60n60fd1p7.pdf

SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A ... See More ⇒

 9.10. Size:362K  silan
 sgt60n60fd1pn sgt60n60fd1p7 sgt60n60fd1ps sgt60n60fd1pt.pdf

SGT60N60FD1PN/P7/PS/PT 60A 600V C 2 1 SGT60N60FD1PN/P7/PS/PT Field G Stop UPS 3 SMPS PFC E 1 2 1 3 60A 600V VCE(sat)( )=2.2V@IC=60A ... See More ⇒