GT30F124 Spec and Replacement
The GT30F124 is a high-power N-channel MOSFET commonly used in automotive ignition systems, power supplies, high-speed switching circuits. Designed for robust performance, it features a drain-source voltage of 300V, a continuous drain current around 30A, a low Rds(on) that minimizes conduction losses. Its fast switching capability supports efficient operation in high-frequency environments, while the built-in avalanche ruggedness ensures reliability under inductive loads. The TO220 package provides effective heat dissipation, making the GT30F124 suitable for compact yet demanding power designs.
Type Designator: GT30F124
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ -
Maximum Power Dissipation: 25
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300
V
|Ic| ⓘ - Maximum Collector Current: 200(pulse)
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.3
V @25℃
Package: TO220SIS
GT30F124 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT30F124 specs
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Specs: APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , FGH75T65UPD , GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 .
History: IRG8P08N120KD
Keywords - GT30F124 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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