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GT30F124 Spec and Replacement

The GT30F124 is a high-power N-channel MOSFET commonly used in automotive ignition systems, power supplies, high-speed switching circuits. Designed for robust performance, it features a drain-source voltage of 300V, a continuous drain current around 30A, a low Rds(on) that minimizes conduction losses. Its fast switching capability supports efficient operation in high-frequency environments, while the built-in avalanche ruggedness ensures reliability under inductive loads. The TO220 package provides effective heat dissipation, making the GT30F124 suitable for compact yet demanding power designs.


   Type Designator: GT30F124
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Package: TO220SIS

 GT30F124 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT30F124 specs

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Specs: APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , FGH75T65UPD , GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 .

History: IRG8P08N120KD

Keywords - GT30F124 transistor spec

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