All IGBT. GT30J121 Datasheet

 

GT30J121 IGBT. Datasheet pdf. Equivalent

Type Designator: GT30J121

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 170

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Package: 2-16C1C

GT30J121 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

 

GT30J121 Datasheet (PDF)

1.1. gt30j121 061101.pdf Size:182K _toshiba

GT30J121
GT30J121

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 ?s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.

3.1. gt30j122 100806.pdf Size:321K _toshiba

GT30J121
GT30J121

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25?s (Typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Colle

3.2. gt30j126 080729.pdf Size:187K _toshiba

GT30J121
GT30J121

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): High speed: tf = 0.05 ?s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 1

Datasheet: GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , IRG4BC40U , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 , GT40J322 , GT40J325 .

 
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