GT30J126 PDF and Equivalents Search

 

GT30J126 Specs and Replacement

Type Designator: GT30J126

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 90 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

Package: TO-3PN

 GT30J126 Substitution

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GT30J126 datasheet

 ..1. Size:187K  toshiba
gt30j126.pdf pdf_icon

GT30J126

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ.) Low saturation voltage VCE (sat) = ... See More ⇒

 7.1. Size:321K  toshiba
gt30j122.pdf pdf_icon

GT30J126

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Rating Unit Coll... See More ⇒

 7.2. Size:182K  toshiba
gt30j121.pdf pdf_icon

GT30J126

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ... See More ⇒

 7.3. Size:192K  toshiba
gt30j122a.pdf pdf_icon

GT30J126

GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A GT30J122A GT30J122A GT30J122A 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. F... See More ⇒

Specs: GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , TGD30N40P , GT30J324 , GT35J321 , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 .

Keywords - GT30J126 transistor spec

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