APT15GP90BDF1 PDF and Equivalents Search

 

APT15GP90BDF1 Specs and Replacement

Type Designator: APT15GP90BDF1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 291 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 43 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

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APT15GP90BDF1 datasheet

 ..1. Size:191K  apt
apt15gp90bdf1.pdf pdf_icon

APT15GP90BDF1

TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz ... See More ⇒

 3.1. Size:424K  apt
apt15gp90bdq1g.pdf pdf_icon

APT15GP90BDF1

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi... See More ⇒

 4.1. Size:160K  apt
apt15gp90b.pdf pdf_icon

APT15GP90BDF1

TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation... See More ⇒

 4.2. Size:401K  apt
apt15gp90bg.pdf pdf_icon

APT15GP90BDF1

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p... See More ⇒

Specs: GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , FGPF4533 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J , APT200GN60JDQ4 , APT20GF120BR , APT20GF120BRD .

History: MMIX1X100N60B3H1 | APT40GP90JDQ2

Keywords - APT15GP90BDF1 transistor spec

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