All IGBT. APT200GN60J Datasheet

 

APT200GN60J IGBT. Datasheet pdf. Equivalent


   Type Designator: APT200GN60J
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 682 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 283 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 4610 pF
   Package: SOT227

 APT200GN60J Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT200GN60J Datasheet (PDF)

 ..1. Size:474K  apt
 apt200gn60j.pdf

APT200GN60J APT200GN60J

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 0.1. Size:524K  apt
 apt200gn60jdq4.pdf

APT200GN60J APT200GN60J

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 4.1. Size:163K  microsemi
 apt200gn60b2g.pdf

APT200GN60J APT200GN60J

APT200GN60B2G600V, VCE(ON) = 1.45V TypicalField Stop IGBTUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 7.1. Size:199K  microsemi
 apt200gt60jr.pdf

APT200GN60J APT200GN60J

APT200GT60JR600V, 200A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz Lo

 7.2. Size:266K  microsemi
 apt200gt60jrdl.pdf

APT200GN60J APT200GN60J

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL600V, 200A, VCE(ON) = 2.0V TypicalResonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-derbolt IGBT offers superior ruggedness and ultrafast switching speed."UL Recognized"Typical ApplicationsISOTOP

Datasheet: TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , GT50JR22 , APT200GN60JDQ4 , APT20GF120BR , APT20GF120BRD , APT20GF120KR , APT20GF120SRD , APT20GT60AR , APT20GT60BR , APT20GT60CR .

 

 
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