APT25GP120BDF1 PDF and Equivalents Search

 

APT25GP120BDF1 Specs and Replacement

Type Designator: APT25GP120BDF1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 69 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO247

 APT25GP120BDF1 Substitution

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APT25GP120BDF1 datasheet

 ..1. Size:190K  apt
 apt25gp120bdf1.pdf pdf_icon

APT25GP120BDF1

TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology TO-247 and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the... See More ⇒

 3.1. Size:93K  apt
 apt25gp120bg.pdf pdf_icon

APT25GP120BDF1

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt... See More ⇒

 3.2. Size:92K  apt
 apt25gp120b.pdf pdf_icon

APT25GP120BDF1

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt... See More ⇒

 7.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP120BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz ... See More ⇒

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Specs: APT20GF120KR , APT20GF120SRD , APT20GT60AR , APT20GT60BR , APT20GT60CR , APT20GT60KR , APT25GN120B , APT25GP120B , SGT40N60NPFDPN , APT25GP90B , APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 .

History: APT30GT60BRDLG | APT25GN120B | APT35GP120J | APT40GF120JRD | APT15GT120SRG | APT26GU30B | APT35GA90B

Keywords - APT25GP120BDF1 transistor spec

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