All IGBT. APT25GP90B Datasheet

 

APT25GP90B Datasheet and Replacement


   Type Designator: APT25GP90B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 72 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT25GP90B Datasheet (PDF)

 ..1. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90B

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 0.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90B

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 0.2. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90B

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 0.3. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90B

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

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Datasheet: APT20GF120SRD , APT20GT60AR , APT20GT60BR , APT20GT60CR , APT20GT60KR , APT25GN120B , APT25GP120B , APT25GP120BDF1 , BT40T60ANF , APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC .

History: IRGB4620D | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | 2N6977 | KE703A

Keywords - APT25GP90B transistor datasheet

 APT25GP90B cross reference
 APT25GP90B equivalent finder
 APT25GP90B lookup
 APT25GP90B substitution
 APT25GP90B replacement

 

 
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