All IGBT. APT25GP90BDF1 Datasheet

 

APT25GP90BDF1 Datasheet and Replacement


   Type Designator: APT25GP90BDF1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 72 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT25GP90BDF1 Datasheet (PDF)

 ..1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 3.1. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 4.1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 4.2. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

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Datasheet: APT20GT60AR , APT20GT60BR , APT20GT60CR , APT20GT60KR , APT25GN120B , APT25GP120B , APT25GP120BDF1 , APT25GP90B , FGA25N120ANTD , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC , APT30GP60JDF1 .

History: MMG300D120B6TC

Keywords - APT25GP90BDF1 transistor datasheet

 APT25GP90BDF1 cross reference
 APT25GP90BDF1 equivalent finder
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 APT25GP90BDF1 substitution
 APT25GP90BDF1 replacement

 

 
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