GT8Q101 Datasheet. Specs and Replacement

Type Designator: GT8Q101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 8 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO3P

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GT8Q101 datasheet

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GT8Q101

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GT8Q101

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Specs: GT8G102, GT8G103, GT8G103LB, GT8G121, GT8G121LB, GT8J101, GT8J102, GT8N101, TGAN60N60F2DS, GT8Q102, HGT1S10N120BNS, HGT1S11N120CNS, HGT1S12N60A4DS, HGT1S12N60A4S, HGT1S12N60B3, HGT1S12N60B3D, HGT1S12N60B3DS

Keywords - GT8Q101 transistor spec

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