GT8Q101 Datasheet and Replacement
Type Designator: GT8Q101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: TO3P
GT8Q101 substitution
GT8Q101 Datasheet (PDF)
Datasheet: GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , RJH60F5DPQ-A0 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS .
History: APT30GF60JU3 | MID75-12A3 | MMG150D170B6TC
Keywords - GT8Q101 transistor datasheet
GT8Q101 cross reference
GT8Q101 equivalent finder
GT8Q101 lookup
GT8Q101 substitution
GT8Q101 replacement
History: APT30GF60JU3 | MID75-12A3 | MMG150D170B6TC
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