GT8Q102 Datasheet and Replacement
Type Designator: GT8Q102
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: DPAK
GT8Q102 substitution
GT8Q102 Datasheet (PDF)
Datasheet: GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , TGPF30N43P , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS , HGT1S12N60B3S .
Keywords - GT8Q102 transistor datasheet
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