APT35GN120B Datasheet and Replacement

TYPICAL PERFORMANCE CURVES APT35GN120BAPT35GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle