APT35GN120B Specs and Replacement
Type Designator: APT35GN120B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 379 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 94 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
APT35GN120B Substitution - IGBT ⓘ Cross-Reference Search
APT35GN120B datasheet
apt35gn120b.pdf
TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120B 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en... See More ⇒
apt35gn120bg.pdf
TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle... See More ⇒
apt35gn120l2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result... See More ⇒
apt35gn120sg.pdf
TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle... See More ⇒
Specs: APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR , APT33GF120HR , RJH3047 , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B .
Keywords - APT35GN120B transistor spec
APT35GN120B cross reference
APT35GN120B equivalent finder
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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