All IGBT. APT35GP120B2DF2 Datasheet

 

APT35GP120B2DF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT35GP120B2DF2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 96 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TMAX

 APT35GP120B2DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT35GP120B2DF2 Datasheet (PDF)

 0.1. Size:194K  apt
apt35gp120b2df2.pdf

APT35GP120B2DF2
APT35GP120B2DF2

TYPICAL PERFORMANCE CURVESAPT35GP120B2DF2APT35GP120B2DF21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100

 1.1. Size:419K  apt
apt35gp120b2dq2g.pdf

APT35GP120B2DF2
APT35GP120B2DF2

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

 3.1. Size:85K  apt
apt35gp120b.pdf

APT35GP120B2DF2
APT35GP120B2DF2

APT35GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge

 3.2. Size:257K  microsemi
apt35gp120bg.pdf

APT35GP120B2DF2
APT35GP120B2DF2

APT35GP120BAPT35GP120BG*G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction

Datasheet: APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR , APT33GF120HR , APT35GN120B , APT35GP120B , TGAN60N60F2DS , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J .

 

 
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