All IGBT. APT35GT120JU3 Datasheet

 

APT35GT120JU3 IGBT. Datasheet pdf. Equivalent

Type Designator: APT35GT120JU3

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 260

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 55

Maximum Junction Temperature (Tj), °C: 150

Package: SOT227

APT35GT120JU3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT35GT120JU3 Datasheet (PDF)

1.1. apt35gt120ju2.pdf Size:606K _apt

APT35GT120JU3
APT35GT120JU3

APT35GT120JU2 ISOTOP® Boost chopper VCES = 1200V IC = 35A @ Tc = 80°C Trench IGBT K Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • Brake switch Features G • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

1.2. apt35gt120ju3.pdf Size:606K _apt

APT35GT120JU3
APT35GT120JU3

APT35GT120JU3 ISOTOP® Buck chopper VCES = 1200V IC = 35A @ Tc = 80°C Trench IGBT C Application • AC and DC motor control • Switched Mode Power Supplies G Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current E - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

4.1. apt35gp120b.pdf Size:85K _apt

APT35GT120JU3
APT35GT120JU3

APT35GP120B 1200V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C • Low Conduction Loss • 100 kHz operation @ 800V, 14A • Low Gate Charge

4.2. apt35gp120jdf2.pdf Size:202K _apt

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GP120JDF2 APT35GP120JDF2 1200V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss

4.3. apt35gn120b.pdf Size:180K _apt

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120B 1200V Utilizing the latest Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

4.4. apt35gp120j.pdf Size:93K _apt

APT35GT120JU3
APT35GT120JU3

APT35GP120J 1200V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss • 50 kHz operation @ 800V, 14A C • Low Ga

4.5. apt35gp120b2df2.pdf Size:194K _apt

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 APT35GP120B2DF2 1200V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100

4.6. apt35ga90b.pdf Size:117K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GA90B 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90B gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

4.7. apt35ga90s.pdf Size:207K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

4.8. apt35gp120b2dq2g.pdf Size:419K _igbt_a

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

4.9. apt35gp120jdq2.pdf Size:451K _igbt_a

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2 ® ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP® file # E145592 •

4.10. apt35gp120j.pdf Size:94K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GP120J 1200V Mos 7™ Ultra Fast IGBT The Mos 7™ Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" C ISOTOP® • Low Conduction Loss • 50 kHz operation @ 800V, 18A

4.11. apt35ga90sd15.pdf Size:238K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

4.12. apt35gn120bg.pdf Size:142K _igbt_a

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle

4.13. apt35gn120sg.pdf Size:142K _igbt_a

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle

4.14. apt35gn120l2dq2g.pdf Size:237K _igbt_a

APT35GT120JU3
APT35GT120JU3

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result

4.15. apt35gp120bg.pdf Size:257K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GP120B APT35GP120BG *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C • Low Conduction

4.16. apt35ga90bd15.pdf Size:238K _igbt_a

APT35GT120JU3
APT35GT120JU3

APT35GA90BD15 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

Datasheet: APT33GF120BR , APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , IRG4PC40U , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J .

 


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