APT40GP60B2DF2 PDF and Equivalents Search

 

APT40GP60B2DF2 Specs and Replacement

Type Designator: APT40GP60B2DF2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 543 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 395 pF

Package: TMAX

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APT40GP60B2DF2 datasheet

 ..1. Size:197K  apt
 apt40gp60b2df2.pdf pdf_icon

APT40GP60B2DF2

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k... See More ⇒

 2.1. Size:537K  apt
 apt40gp60b2dq2g.pdf pdf_icon

APT40GP60B2DF2

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high... See More ⇒

 4.1. Size:96K  apt
 apt40gp60b.pdf pdf_icon

APT40GP60B2DF2

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4... See More ⇒

 4.2. Size:109K  apt
 apt40gp60bg.pdf pdf_icon

APT40GP60B2DF2

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4... See More ⇒

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Specs: APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , CRG15T120BNR3S , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B .

Keywords - APT40GP60B2DF2 transistor spec

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