All IGBT. APT40GP90B Datasheet

 

APT40GP90B Datasheet and Replacement


   Type Designator: APT40GP90B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 325 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO247
      - IGBT Cross-Reference

 

APT40GP90B Datasheet (PDF)

 ..1. Size:162K  apt
 apt40gp90b.pdf pdf_icon

APT40GP90B

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 0.1. Size:440K  apt
 apt40gp90b2dq2g.pdf pdf_icon

APT40GP90B

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 0.2. Size:159K  apt
 apt40gp90bg.pdf pdf_icon

APT40GP90B

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 0.3. Size:192K  apt
 apt40gp90b2df2.pdf pdf_icon

APT40GP90B

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

SHOW MORE

Datasheet: APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , SGH80N60UFD , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 .

Keywords - APT40GP90B transistor datasheet

 APT40GP90B cross reference
 APT40GP90B equivalent finder
 APT40GP90B lookup
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