All IGBT. APT50GP60B2DF2 Datasheet

 

APT50GP60B2DF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT50GP60B2DF2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 465 pF
   Qgⓘ - Total Gate Charge, typ: 165 nC
   Package: TMAX

 APT50GP60B2DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT50GP60B2DF2 Datasheet (PDF)

 ..1. Size:196K  apt
 apt50gp60b2df2.pdf

APT50GP60B2DF2 APT50GP60B2DF2

TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

 2.1. Size:425K  apt
 apt50gp60b2dq2g.pdf

APT50GP60B2DF2 APT50GP60B2DF2

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 4.1. Size:88K  apt
 apt50gp60b.pdf

APT50GP60B2DF2 APT50GP60B2DF2

APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge

 4.2. Size:96K  apt
 apt50gp60bg.pdf

APT50GP60B2DF2 APT50GP60B2DF2

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

Datasheet: APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B , GT30F125 , APT50GP60J , APT50GP60JDF2 , APT50GP60S , APT50GT120JU2 , APT50GT120JU3 , APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 .

 

 
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