All IGBT. APT50GP60J Datasheet

 

APT50GP60J IGBT. Datasheet pdf. Equivalent

Type Designator: APT50GP60J

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 329

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Package: SOT227

APT50GP60J Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT50GP60J Datasheet (PDF)

1.1. apt50gp60b2df2.pdf Size:196K _apt

APT50GP60J
APT50GP60J

TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 200 kH

1.2. apt50gp60j.pdf Size:95K _apt

APT50GP60J
APT50GP60J

APT50GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low Gat

1.3. apt50gp60b.pdf Size:88K _apt

APT50GP60J
APT50GP60J

APT50GP60B 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E • Low Conduction Loss • 200 kHz operation @ 400V, 26A C • Low Gate Charge

1.4. apt50gp60s.pdf Size:95K _apt

APT50GP60J
APT50GP60J

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

1.5. apt50gp60jdf2.pdf Size:210K _apt

APT50GP60J
APT50GP60J

APT50GP60JDF2 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOPfi switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low

1.6. apt50gp60ldlg.pdf Size:189K _igbt_a

APT50GP60J
APT50GP60J

TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT® The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo

1.7. apt50gp60jdq2.pdf Size:450K _igbt_a

APT50GP60J
APT50GP60J

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2 ® ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP® file # E145592 • Low

1.8. apt50gp60bg.pdf Size:96K _igbt_a

APT50GP60J
APT50GP60J

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

1.9. apt50gp60j.pdf Size:105K _igbt_a

APT50GP60J
APT50GP60J

APT50GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low Gat

1.10. apt50gp60sg.pdf Size:96K _igbt_a

APT50GP60J
APT50GP60J

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

1.11. apt50gp60b2dq2g.pdf Size:425K _igbt_a

APT50GP60J
APT50GP60J

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® (B2) POWER MOS 7 IGBT T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

Datasheet: APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B , APT50GP60B2DF2 , STGW38IH130D , APT50GP60JDF2 , APT50GP60S , APT50GT120JU2 , APT50GT120JU3 , APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR .

 


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