APT50GP60S IGBT. Datasheet pdf. Equivalent
Type Designator: APT50GP60S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 465 pF
Qgⓘ - Total Gate Charge, typ: 165 nC
Package: D3PAK
APT50GP60S Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT50GP60S Datasheet (PDF)
apt50gp60s.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gp60sg.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gp60b2df2.pdf
TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH
apt50gp60b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for
apt50gp60jdf2.pdf
APT50GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPfiswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low
apt50gp60b.pdf
APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge
apt50gp60jdq2.pdf
TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low
apt50gp60j.pdf
APT50GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low Gat
apt50gp60bg.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gp60ldlg.pdf
TYPICAL PERFORMANCE CURVESAPT50GP60LDL(G)APT50GP60LDL(G)600V, 50A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo
Datasheet: APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B , APT50GP60B2DF2 , APT50GP60J , APT50GP60JDF2 , GT30J127 , APT50GT120JU2 , APT50GT120JU3 , APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , APT60GT60JRD .
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