APT60GT60JRD IGBT. Datasheet pdf. Equivalent
Type Designator: APT60GT60JRD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 400 pF
Qgⓘ - Total Gate Charge, typ: 280 nC
Package: SOT227
APT60GT60JRD Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT60GT60JRD Datasheet (PDF)
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Datasheet: APT50GP60S , APT50GT120JU2 , APT50GT120JU3 , APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , TGPF30N40P , APT60GU30B , APT65GP60B2 , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 .
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