All IGBT. APT65GP60JDF2 Datasheet

 

APT65GP60JDF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT65GP60JDF2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 431 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 580 pF
   Qgⓘ - Total Gate Charge, typ: 210 nC
   Package: SOT227

 APT65GP60JDF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT65GP60JDF2 Datasheet (PDF)

 ..1. Size:204K  apt
 apt65gp60jdf2.pdf

APT65GP60JDF2 APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1

 3.1. Size:478K  apt
 apt65gp60jdq2.pdf

APT65GP60JDF2 APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 4.1. Size:96K  apt
 apt65gp60j.pdf

APT65GP60JDF2 APT65GP60JDF2

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate

 5.1. Size:444K  apt
 apt65gp60l2dq2g.pdf

APT65GP60JDF2 APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 5.2. Size:88K  apt
 apt65gp60b2.pdf

APT65GP60JDF2 APT65GP60JDF2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 5.3. Size:90K  apt
 apt65gp60b2g.pdf

APT65GP60JDF2 APT65GP60JDF2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 5.4. Size:197K  apt
 apt65gp60l2df2.pdf

APT65GP60JDF2 APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2APT65GP60L2DF2600V POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC Low Conduction Loss 100 kH

Datasheet: APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , RJP6065DPM , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J .

 

 
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