All IGBT. APT65GP60JDF2 Datasheet

 

APT65GP60JDF2 Datasheet and Replacement


   Type Designator: APT65GP60JDF2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 431 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 580 pF
   Package: SOT227
      - IGBT Cross-Reference

 

APT65GP60JDF2 Datasheet (PDF)

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APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1

 3.1. Size:478K  apt
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APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 4.1. Size:96K  apt
apt65gp60j.pdf pdf_icon

APT65GP60JDF2

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate

 5.1. Size:444K  apt
apt65gp60l2dq2g.pdf pdf_icon

APT65GP60JDF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

Datasheet: APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , MBQ40T65FDSC , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J .

History: IXGB200N60B3 | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | DF200R12KE3 | IHW30N135R3 | JNG75T65HYU2

Keywords - APT65GP60JDF2 transistor datasheet

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