APT75GP120B2 PDF and Equivalents Search

 

APT75GP120B2 Specs and Replacement

Type Designator: APT75GP120B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1042 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 460 pF

Package: TMAX

 APT75GP120B2 Substitution

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APT75GP120B2 datasheet

 ..1. Size:94K  apt
 apt75gp120b2.pdf pdf_icon

APT75GP120B2

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char... See More ⇒

 0.1. Size:96K  apt
 apt75gp120b2g.pdf pdf_icon

APT75GP120B2

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char... See More ⇒

 4.1. Size:453K  apt
 apt75gp120jdq3.pdf pdf_icon

APT75GP120B2

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒

 4.2. Size:33K  apt
 apt75gp120j.pdf pdf_icon

APT75GP120B2

APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. C Low Conduction Loss RBSOA rated Low Gate Charge G ... See More ⇒

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Specs: APT60GT60BR, APT60GT60JR, APT60GT60JRD, APT60GU30B, APT65GP60B2, APT65GP60J, APT65GP60JDF2, APT65GP60L2DF2, GT30F125, APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, APT80GP60B2, APT80GP60J, APT80GP60JDF3, APT83GU30B

Keywords - APT75GP120B2 transistor spec

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