HGT1S12N60C3DR Datasheet. Specs and Replacement

Type Designator: HGT1S12N60C3DR  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 104 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Package: TO262

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HGT1S12N60C3DR datasheet

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HGT1S12N60C3DR

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The ... See More ⇒

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HGT1S12N60C3DR

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Specs: HGT1S12N60A4DS, HGT1S12N60A4S, HGT1S12N60B3, HGT1S12N60B3D, HGT1S12N60B3DS, HGT1S12N60B3S, HGT1S12N60C3, HGT1S12N60C3D, RJH60F5DPQ-A0, HGT1S12N60C3DRS, HGT1S12N60C3DS, HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS, HGT1S12N60C3S, HGT1S12N60C3S9A, HGT1S1N120BNDS9A

Keywords - HGT1S12N60C3DR transistor spec

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