HGT1S12N60C3DR IGBT. Datasheet pdf. Equivalent
Type Designator: HGT1S12N60C3DR
Type: IGBT + Anti-Parallel Diode
Marking Code: 12N60CDR
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 24 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 37 nS
Qgⓘ - Total Gate Charge, typ: 50 nC
Package: TO262
HGT1S12N60C3DR Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGT1S12N60C3DR Datasheet (PDF)
hgtp12n60c3d hgt1s12n60c3d.pdf
HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
hgtp12n60c3d hgt1s12n60c3ds.pdf
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Datasheet: HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS , HGT1S12N60B3S , HGT1S12N60C3 , HGT1S12N60C3D , MBQ40T65FDSC , HGT1S12N60C3DRS , HGT1S12N60C3DS , HGTP12N60C3R , HGT1S12N60C3R , HGT1S12N60C3RS , HGT1S12N60C3S , HGT1S12N60C3S9A , HGT1S1N120BNDS9A .
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