BRG20N120D Datasheet. Specs and Replacement

Type Designator: BRG20N120D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 240 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 76 pF

Package: TO3P

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BRG20N120D datasheet

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BRG20N120D

BRG20N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications ... See More ⇒

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BRG20N120D

BRG20N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo... See More ⇒

Specs: FGW50N60HD, FGW50N60VD, FGW75N60H, FGW75N60HD, FGW85N60RB, 1MBH60-100, FGL40N120AN, BRG15N120D, GT30F124, BRG25N120D, SSIG15N135H, SSIG20N135H, BT25T120ANF, BT15T120ANF, BT15N120ANF, BT40N60BNF, BT30N60ANF

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