All IGBT. BT15T120ANF Datasheet

 

BT15T120ANF IGBT. Datasheet pdf. Equivalent

Type Designator: BT15T120ANF

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 186

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 16

Maximum Collector Capacity (Cc), pF: 52

Package: TO3PN

BT15T120ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15T120ANF Datasheet (PDF)

1.1. bt15t120anf.pdf Size:557K _igbt_a

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

1.2. bt15t120anf.pdf Size:557K _crhj

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

Datasheet: 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , G20N60B3D , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM .

 


BT15T120ANF
  BT15T120ANF
  BT15T120ANF
  BT15T120ANF
 
BT15T120ANF
  BT15T120ANF
  BT15T120ANF
  BT15T120ANF
 

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