BT15T120ANF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

BT15T120ANF Specs and Replacement

Type Designator: BT15T120ANF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 186 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 52 pF

Package: TO3P

BT15T120ANF Substitution

- IGBT ⓘ Cross-Reference Search

BT15T120ANF datasheet

..1. Size:557K crhj
bt15t120anf.pdf pdf_icon

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe... See More ⇒

..2. Size:557K wuxi china
bt15t120anf.pdf pdf_icon

6.1. Size:261K wuxi china
bt15t120cnr.pdf pdf_icon

Silicon FS Trench IGBT R BT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. Features Trench FS T... See More ⇒

9.1. Size:600K wuxi china
bt15t60a8f bt15t60a9f.pdf pdf_icon