All IGBT. IRGSL4B60K Datasheet

 

IRGSL4B60K IGBT. Datasheet pdf. Equivalent

Type Designator: IRGSL4B60K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 63

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 18

Maximum Collector Capacity (Cc), pF: 25

Package: TO262

IRGSL4B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGSL4B60K Datasheet (PDF)

0.1. irgsl4b60k.pdf Size:299K _international_rectifier

IRGSL4B60K
IRGSL4B60K

PD - 94633AIRGB4B60KIRGS4B60KIRGSL4B60KINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150CEVCE(on) typ. = 2.1VBenefits

0.2. irgsl4b60kd1.pdf Size:442K _international_rectifier

IRGSL4B60K
IRGSL4B60K

PD - 94607BIRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated

 8.1. irgsl4640d.pdf Size:809K _international_rectifier

IRGSL4B60K
IRGSL4B60K

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

8.2. auirgsl4062d1.pdf Size:415K _international_rectifier

IRGSL4B60K
IRGSL4B60K

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

 8.3. irgsl4062d.pdf Size:460K _international_rectifier

IRGSL4B60K
IRGSL4B60K

PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur

Datasheet: AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , GT50J101 , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF .

 

 
Back to Top