HGT1S20N60C3R Datasheet and Replacement
Type Designator: HGT1S20N60C3R
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 164 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Package: TO262
- IGBT Cross-Reference
HGT1S20N60C3R Datasheet (PDF)
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .
Datasheet: HGT1S14N36G3VLS9A , HGT1S1N120BNDS , HGT1S1N120CNDS , HGT1S20N35G3VL , HGT1S20N35G3VLS , HGT1S20N35G3VLS9A , HGT1S20N60B3S , HGT1S20N60C3 , RJH60F7BDPQ-A0 , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS .
History: AIKW20N60CT | MWI100-12A8 | HGT1S20N60C3RS | IXGK120N60B
Keywords - HGT1S20N60C3R transistor datasheet
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HGT1S20N60C3R replacement
History: AIKW20N60CT | MWI100-12A8 | HGT1S20N60C3RS | IXGK120N60B



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